The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Jun. 18, 2001
Yongfa Kong, Tianjin, CN;
Jingjun Xu, Tianjin, CN;
Guangao Li, Tianjin, CN;
Qian Sun, Tianjin, CN;
Baiquan Tang, Tianjin, CN;
Hui Huang, Tianjin, CN;
Ziheng Huang, Tianjin, CN;
Shaolin Chen, Tianjin, CN;
Xiaojun Chen, Tianjin, CN;
Guangyin Zhang, Tianjin, CN;
Nankai University, Tianjin, CN;
Abstract
This invention relates to the field of materials of the photorefractive crystal. The composition of these crystals is Li Nb O : Fe , M , where M can be magnesium, indium, or zinc; when using q to denote the ion valence of M (q=2 when M is Mg or Zn, and q=3 when M is In), the values of x, y, m, and n are in the range of 0.05≦x≦0.13, 0.00≦y≦0.01, 5.0×10 ≦m≦7.5×10 , and 0.02≦qn≦0.13. This invention greatly improves the photorefractive properties of LiNbO crystals: makes it have a high diffraction efficiency (more than 68%), a fast response speed for photorefraction (an order of magnitude faster than iron doped LiNbO ), and a high resistance to optical scattering (the light intensity threshold to photorefractive fan scattering near two orders of magnitude larger than LiNbO : Fe). This invention is an excellent three-dimensional optical storage material and has a vast potential market.