The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2004

Filed:

Aug. 23, 2000
Applicant:
Inventors:

Geoffrey John Davies, Randburg, ZA;

Raymond Albert Chapman, Johannesburg, ZA;

Aulette Stewart, Randburg, ZA;

Lesley Kay Hedges, Brackenhurst, ZA;

Assignee:

Moosa Mahomed Adia, Benoni, ZA;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 3/106 ; C30B 1/100 ; C30B 1/700 ;
U.S. Cl.
CPC ...
C01B 3/106 ; C30B 1/100 ; C30B 1/700 ;
Abstract

The invention provides a mass of crystals, particularly diamond crystals, having a size of less than 100 microns and in which mass the majority of the crystals are faceted single crystals. The invention further provides a method of producing such a mass of crystals which utilizes crystal growth under elevated temperature and pressure conditions, the supersaturation driving force necessary for crystal growth being dependent, at least in part, on the difference in surface free energy between low Miller index surfaces and high Miller index surfaces of the crystals. Preferably, the method is carried out under conditions where the Wulff effect dominates.


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