The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2004
Filed:
Sep. 10, 2002
Applicant:
Inventors:
Michael A. A. In't Zandt, Veldhoven, NL;
Erwin A. Hijzen, Blanden, BE;
Raymond J. E. Hueting, Helmond, NL;
Assignee:
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 2/358 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 2/358 ;
Abstract
To avoid premature breakdown at the edge of the active area of RESURF trench-gate MOS device, an edge field plate ( ) can be placed with a connection to the gate and a second spaced field plate ( ) in the same trench ( ). The gate trench network ( ) could be either formed by hexagon unit cells or by square unit cells. Since the RESURF condition requires a small cell pitch, self-aligned processing could be used.
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In't Zandt, Michael A. A.. (2004). Edge termination in a trench-gate mosfet (U.S. Patent No. 6833583). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6833583
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile