The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2004
Filed:
Dec. 02, 2002
Satoshi Tanimoto, Yokohama, JP;
Hideyo Okushi, Ibaraki, JP;
Other;
Abstract
In silicon carbide semiconductor device and manufacturing method therefor, a metal electrode which is another than a gate electrode and which is contacted with a singlecrystalline silicon carbide substrate is treated with a predetermined heat process at a temperature which is lower than a thermal oxidization temperature by which a gate insulating film is formed and is sufficient to carry out a contact annealing between the singlecrystalline silicon carbide substrate and a metal after a whole surrounding of the gate insulating film is enclosed with the singlecrystalline silicon carbide substrate, a field insulating film, and the gate electrode. The present invention is applicable to a MOS capacitor, an n channel planar power MOSFET, and an n channel planar power IGBT.