The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2004
Filed:
Nov. 14, 2002
Sung-Kwon Lee, Ichon-shi, KR;
Sang-Ik Kim, Ichon-shi, KR;
Hynix Semiconductor Inc., Kyoungku-do, KR;
Abstract
A method for fabricating a semiconductor device by simultaneously forming via holes in a multi-layered structure having depth differences without requiring additional process steps. Steps to achieve this effect include forming a first conductive layer; forming a first etching protection layer on the first conductive layer; forming a first insulating layer; forming a second conductive layer on the first insulating layer; forming a second etching protection layer on the second conductive layer, wherein etching protection efficiency of the second protection layer is higher than that of the first etching protection layer; forming a second insulating layer; and forming a first and a second via hole respectively exposing the first and the second conductive layer by selectively etching the first and second insulating layer.