The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2004
Filed:
Feb. 28, 2003
Arkalgud Sitaram, Fishkill, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating a memory cell, in particular, a DRAM memory cell, having a transistor and a trench capacitor that are connected to one another through a buried strap contact includes applying at least one diffusion barrier on an upper surface of a first filling material of the trench capacitor to prevent an undesirable outdiffusion of dopant from the first filling material. Thus, with the diffusion barrier intact, at most a dopant that is possibly present in a second filling material can outdiffuse into adjoining regions. However, the outdiffusion of dopant from the first filling material can be initiated in a targeted manner by breaking open the diffusion barrier by a thermal treatment. Through the possibility of restraining the diffusion of the dopant until a suitable point in the process, it is possible to avoid an excessive outdiffusion into a contact region with a transistor.