The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6833295 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 21, 2004

Filed:

Jul. 31, 2003
Applicant:
Inventor:

Yoko Kajita, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ;
Abstract

An oxidation process is performed for a surface of the SOI film exposed from the opening pattern to form and eliminate the silicon oxide film, so that the SOI film would be thinned. In the opening pattern, formed a gate oxide film as a third insulation film, on which a poly-silicon film is formed as a conductive film so as to fill in the opening pattern. The first insulation film is then eliminated while the second insulation film formed on the inner wall of the opening pattern is remained, so that a gate electrode provided on the side wall thereof with a sidewall would be formed on the gate oxide film.


Find Patent Forward Citations

Kajita, Yoko. (2004). Method of manufacturing a semiconductor device (U.S. Patent No. 6833295). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6833295

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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