The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2004
Filed:
Aug. 02, 2000
Tetsuro Kawahara, Osaka, JP;
Kazuhiro Doushita, Osaka, JP;
Hiroyuki Inomata, Osaka, JP;
Etsuo Ogino, Osaka, JP;
Kenji Mori, Osaka, JP;
Yoshifumi Kijima, Osaka, JP;
Hiroaki Tada, Osaka, JP;
Nippon Sheet Glass Co., Ltd., Osaka, JP;
Abstract
A surface of a glass plate is coated with a first n-type semiconductor film which is a 50 nm-thick niobium oxide film as a primer layer. The primer layer is coated with a 250 nm-thick photocatalyst film comprising titanium oxide. Thus, an article having a photocatalytically active surface is obtained. The two coating films can be formed by sputtering. The first n-type semiconductor film as the primer layer is selected so as to have a larger energy band gap than the titanium oxide. Due to this constitution, more holes are generated near the film surface. This article can be free from the problem of conventional titanium oxide films having photocatalytic activity that it is difficult to generate many surface holes contributing to photocatalytic activity, because electrons and holes generated by charge separation recombine within the film, making it impossible to effectively heighten catalytic activity.