The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Apr. 04, 2002
Yoshihiro Watanabe, Nagano-ken, JP;
Takumi Seki, Misato-mura, JP;
Hideaki Naono, Misato-mura, JP;
Satoshi Taguchi, Matsumoto, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
The present invention provides a method of manufacturing a nonlinear element capable further improving nonlinearity of a nonlinear element, an electrooptic device, and electronic apparatus. In forming an element substrate of a liquid crystal device, an underlying layer is formed on the surface of the element substrate in the underlying layer forming step (a), and then a first metal film having a metal film containing at least Ta is formed in the first metal film forming step (b). Then, in the insulating film forming step (c), the first metal film is annealed under high pressure in an atmosphere containing water vapor to form an insulating film on the first metal film. Then, in the second metal film forming step, a second metal film is formed on the surface of the insulating film to produce a nonlinear element.