The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Apr. 24, 2002
Kenshi Kanegae, Takatsuki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
After forming a resist pattern on an insulating film deposited on a semiconductor substrate, the insulating film is subjected to plasma etching using an etching gas including carbon and fluorine with the resist pattern used as a mask. A polymer film having been deposited on the resist pattern during the plasma etching is subjected to a first stage of ashing with a relatively low chamber pressure and relatively low plasma generation power by using an oxygen gas or a gas including oxygen as a principal constituent. A residual polymer present on the insulating film in completing the first stage of the ashing is subjected to a second stage of the ashing with a relatively high chamber pressure and relatively high plasma generation power by using an oxygen gas or a gas including oxygen as a principal constituent.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile