The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2004

Filed:

Sep. 13, 2002
Applicant:
Inventors:

Yoshihide Iwazaki, Tenri, JP;

Shinji Suminoe, Tenri, JP;

Hiroyuki Nakanishi, Nara, JP;

Toshiya Ishio, Nabari, JP;

Takamasa Tanaka, Nara, JP;

Katsunobu Mori, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/44763 ;
U.S. Cl.
CPC ...
H01L 2/44763 ;
Abstract

A manufacturing method of a semiconductor device for providing wires on a front surface of a semiconductor wafer by providing a plating layer, in which conductive layers provided on the front and back surfaces of the semiconductor wafer are electrically conducted by solder filled in its through-holes, and electrolytic plating is carried out by electrically connecting cathode terminals of an electrolytic plating apparatus and the conductive layer provided on the back surface of the semiconductor wafer which is provided with a mask on the conductive layer provided on its front surface.


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