The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Sep. 16, 2003
Kwan Ju Koh, Bucheon-si, KR;
ANAM Semiconductor, Inc., Seoul, KR;
Abstract
Semiconductor devices and methods for forming semiconductor devices are disclosed. In a disclosed method, a gate of a semiconductor device is formed by separately forming a lower gate and an upper gate electrode on a semiconductor substrate. A lower gate polysilicon layer is first formed on the semiconductor substrate and selectively removed to form the lower gate electrode. LDD regions are formed on opposite sides of the lower gate electrode. A nitride film is formed and etched to form sidewalls of the lower gate electrode. Source and drain regions are formed by implanting impurity ions into the LDD regions on the opposite sides of the lower gate electrode. An upper gate polysilicon layer is formed. Then, the upper gate polysilicon layer is selectively removed to form an upper gate electrode. A silicide layer is then formed on the top and side surfaces of the upper gate electrode.