The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Jul. 02, 2002
Kanta Saino, Tokyo, JP;
Other;
Abstract
A gettering layer for capturing heavy metal impurities is formed on a wafer back surface. Immediately before formation of a metal wiring layer, a semiconductor device is subjected to first heat treatment at a predetermined temperature so that the heavy metal impurities are heat-diffused and captured in the gettering layer. The gettering layer with the heavy metal impurities captured therein is removed before second heat treatment following the first heat treatment. After removing the gettering layer, a first amorphous silicon layer as a filler for filling a contact hole is deposited on a wafer device surface including a device active region while a second amorphous silicon layer having an impurity concentration equal to that of the first amorphous silicon layer is simultaneously deposited on the wafer back surface.