The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Dec. 18, 2002
Won Sic Woo, Koori-Shi, KR;
Hynix Semiconductor INC, Ichon-shi, KR;
Abstract
The present invention relates to a method of manufacturing a semiconductor device. The method comprises the steps of forming a plurality of lower bit lines arranged in a first direction on a semiconductor substrate by performing ion implantation using a mask defining the lower bit lines, forming a lower field oxide film within a region in which the lower bit lines are formed to define an active region and a device isolation region, forming a first insulating film for accumulating charges on the active region, forming a plurality of word lines arranged in parallel in a second direction orthogonal to the first direction of the lower bit lines, depositing an oxide film on the entire structure of the semiconductor substrate including the lower bit lines and the word lines, flattening the oxide film and then removing the oxide film on the word lines, forming a second insulating film for accumulating charges corresponding to the first insulating film for accumulating charges on the word lines and then forming an upper field oxide film corresponding to the lower field oxide film on the word lines, depositing polysilicon on the entire structure of the semiconductor substrate, performing ion implantation using a mask defining upper bit lines for polysilicon to form the upper bit lines, and then performing ion implantation using a mask defining an upper substrate to form the upper substrate, and removing given portions of the upper bit lines formed on the upper field oxide film to separate the upper bit lines.