The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2004

Filed:

Sep. 23, 2002
Applicant:
Inventors:

Enrico Laurin, Lissone, IT;

Matteo Bordogna, Bellusco, IT;

Oreste Bernardi, Sangiorgio Piacentino, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including at least the following phases: implanting active areas on a semiconductor substrate to obtain at least a first, a second and a third integrated region of corresponding photosensors; forming a stack of layers of different thickness and refractive index layers over the photosensors to provide an interferential filter for said photosensors. The stack is obtained by a deposition of a first oxide stack including a first, a second and a third oxide layer over at least one photosensor; moreover, this third oxide layer is obtained by a deposition step of an protecting undoped premetal dielectric layer.


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