The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Aug. 27, 2002
Yasuhiko Suzuki, Miyagi, JP;
Takeharu Asano, Miyagi, JP;
Motonobu Takeya, Miyagi, JP;
Osamu Goto, Miyagi, JP;
Shinro Ikeda, Miyagi, JP;
Katsuyoshi Shibuya, Miyagi, JP;
Sony Corporation, , JP;
Abstract
When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x≦0.011 and x≧450 &mgr;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H≦70×10 (cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos (1−HCZ), where C (cm ) is the proportionality constant when the radius of curvature of the substrate &rgr; (cm) is expressed as 1/&rgr;=CZ.