The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Jul. 09, 2003
Jean-Michel Mirabel, Cabries, FR;
Rachid Bouchakour, Marseilles, FR;
Pierre Canet, Les Milles, FR;
Romain Laffont, Marseilles, FR;
Juliano Razafindramora, Marseilles, FR;
Other;
Abstract
A memory cell in an EEPROM includes a floating gate transistor that includes a first conducting terminal and a control gate. A method of controlling the memory cell includes setting a state of the memory cell by simultaneously applying voltage pulses of opposite polarities respectively to the first conducting terminal and to the control gate. The voltage pulses including a first portion having a first slope and a second portion having a second slope, wherein the second slope is based upon the polarities of the voltage pulses. The method allows the amplitude of the voltage pulses to be reduced.