The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Feb. 20, 2002
Quiqun (Kevin) Qi, Newark, CA (US);
Xizeng (Stone) Shi, Fremont, CA (US);
Matthew Gibbons, Livermore, CA (US);
Western Digital (Fremont), Inc., Fremont, CA (US);
Abstract
A magnetic random access memory (MRAM) cell and a memory array formed from the MRAM cells are disclosed. The MRAM cell includes a magnetic tunneling junction and a transistor. The magnetic tunneling junction includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The gate of the transistor is coupled to a first end of the magnetic tunneling junction. The source of the transistor is coupled to a second end the magnetic tunneling junction. The drain of the transistor is coupled with an output for reading the magnetic memory cell. During reading, a read current is applied to the magnetic tunneling junction and the transistor is preferably operated in a saturation region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile