The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Apr. 05, 2001
Applicant:
Inventors:
Assignee:
Infineon Technologies AG, , DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ; H01L 2/166 ;
U.S. Cl.
CPC ...
H01L 2/900 ; H01L 2/166 ;
Abstract
A method for electrically determining in a semiconductor wafer the location of edges of a well that underlies an insulating layer that includes forming in the wafer before forming of the well and the insulating layer a plurality of conductive stripes will that pass under the future insulating layer and extend to varying distances under the insulating layer so as to include stripes that will penetrate an edge to be located so as to form a low resistance connection thereto and stripes that will fall short of an edge to be located. From the stripes of minimum penetration that make low resistance can be determined the location of the well edges.