The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Nov. 30, 2001
Tadashi Oshima, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A gate electrode conductive film is formed on the surface of a semiconductor substrate. First and second gate mask patterns made of a first insulating material are formed on the gate electrode conductive film on first and second sections. Sidewall spacers are formed on the sidewalls of the first and second gate mask patterns, the sidewall spacer being made of a second insulating material having an etching resistance different from the first insulating material. The second section is covered with a mask pattern and the sidewall spacer on the sidewall of the first gate mask pattern is removed. The gate electrode conductive film is etched to leave first and second gate electrodes on the first and second sections.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile