The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
May. 02, 2002
Applicant:
Inventor:
Yushi Inoue, Fukuyama, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/710 ;
U.S. Cl.
CPC ...
H01L 2/710 ;
Abstract
A semiconductor device comprising: a MOS transistor having a gate electrode formed on a semiconductor substrate, a wiring connected to the gate electrode via a first insulating film, an antenna pattern for reducing plasma damage in the form of lines/spaces connected to the wiring, and a second insulating film formed on the wiring and the antenna pattern.