The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Dec. 18, 2001
Tohru Ueda, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A thin-film transistor includes: a pair of n-type heavily doped regions that are horizontally spaced apart from each other; p-type channel regions that are located between the n-type heavily doped regions so as to face their associated gate electrodes, respectively; an n-type intermediate region provided between two adjacent ones of the channel regions; and two pairs of lightly doped regions. The lightly doped regions in one of the two pairs have mutually different carrier concentrations and are located between one of the heavily doped regions and one of the channel regions that is closer to the heavily doped region than any other channel region is. The lightly doped regions in the other pair also have mutually different carrier concentrations and are located between the other heavily doped region and another one of the channel regions that is closer to the heavily doped region than any other channel region is.