The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Mar. 09, 2004
Applicant:
Inventors:
Alan J. Heeger, Santa Barbara, CA (US);
Marc Pauchard-Strebel, Fribourg, CH;
Martin Vehse, Bremen, DE;
Ludvig Edman, Umeå, SE;
Daniel Moses, Santa Barbara, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/524 ; H01L 5/100 ; H01L 2/924 ; H01L 2/701 ; H01L 2/712 ;
U.S. Cl.
CPC ...
H01L 3/524 ; H01L 5/100 ; H01L 2/924 ; H01L 2/701 ; H01L 2/712 ;
Abstract
A solid state lasing structure comprising a field effect transistor in which source and drain electrodes are disposed on a semiconducting light emitting organic polymer forming an active layer on a gate whereby current between the source and drain electrodes defines and flows along a channel in the active layer to define a recombination and emission zone.