The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2004

Filed:

Dec. 12, 2001
Applicant:
Inventors:

Saied Ghamaty, La Jolla, CA (US);

Norbert B. Elsner, La Jolla, CA (US);

Assignee:

Hi-Z Technology, Inc., San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/906 ; H01L 3/10328 ; H01L 3/10336 ; H01L 3/1072 ; H01L 3/1109 ;
U.S. Cl.
CPC ...
H01L 2/906 ; H01L 3/10328 ; H01L 3/10336 ; H01L 3/1072 ; H01L 3/1109 ;
Abstract

A superlattice thermoelectric device. The device includes p-legs and n-legs, each leg includes a large number of at least two different very thin alternating layers of elements. The n-legs in the device includes alternating layers of silicon and silicon carbide. In preferred embodiments p-legs include a superlatice of B-C layers, with alternating layers of different stoichiometric forms of B-C. This preferred embodiment is designed to produce 20 Watts with a temperature difference of 300 degrees C. with a module efficiency of about 30 percent. The module is about 1 cm thick with a cross section area of about 7 cm and has about 10,000 sets of n and p legs each set of legs being about 55 microns thick and having about 5,000 very thin layers (each layer about 10 nm thick).


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