The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2004

Filed:

May. 15, 2001
Applicant:
Inventors:

William J. Hamilton, Jr., Ventura, CA (US);

Eli E. Gordon, Goleta, CA (US);

Ronald W. Berry, Goleta, CA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/100 ;
U.S. Cl.
CPC ...
H01L 3/100 ;
Abstract

A hybrid microelectronic array structure is fabricated from a readout integrated circuit array of microelectronic integrated circuits and a supported array of supported islands. The supported islands include one or more supported elements, with a respective supported element for each of the readout integrated circuits. The supported array is made by depositing the first semiconductor region onto a supported substrate and depositing the second semiconductor region onto the first semiconductor region, and defining supported islands as electrically isolated segments. On each supported element, a first interconnect is formed to the first semiconductor region and a second interconnect is formed to the second semiconductor region. The supported array is joined to the readout integrated circuit array by an interconnect structure, preferably a bump interconnect structure, to form the hybrid microelectronic array structure, with each readout integrated electrically interconnected to the respective one of the supported elements.


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