The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Dec. 14, 2001
Applicant:
Inventors:
Philip A. Fisher, Foster City, CA (US);
Chih-Yuh Yang, San Jose, CA (US);
Marina V. Plat, San Jose, CA (US);
Russell R.A. Callahan, San Jose, CA (US);
Ashok M. Khathuria, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/126 ; H01L 2/142 ;
U.S. Cl.
CPC ...
H01L 2/126 ; H01L 2/142 ;
Abstract
A process for forming a transistor having a gate width of less than 70 nm is disclosed herein. The process includes E-beam irradiation a gate patterned on a photoresist layer, trimming the gate patterned on the photoresist layer, and etching the gate patterned on the photoresist layer to a polysilicon layer disposed below the photoresist layer.