The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Jun. 03, 2003
James L. Gole, Atlanta, GA (US);
Lenward T. Seals, Atlanta, GA (US);
Georgia Tech Research Corporation, Atlanta, GA (US);
Abstract
A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcohol. Alternatively, the post-etch method of enhancing and stabilizing the PL from a PS substrate includes treating the PS substrate with an aqueous hydrochloric acid and alcohol solution. Further, the PL of the PS substrate can be enhanced by treating the PS substrate with dye. Furthermore, the PS substrate can be metallized to form a PS substrate with resistances ranging from 20 to 1000 ohms.