Semiconductor member manufacturing method and semiconductor device manufacturing method

Abstract

This invention provides an SOI substrate manufacturing method using a transfer method (bonding and separation). A separation layer ( ) is formed on a silicon substrate ( ). A silicon layer ( ), SiGe layer ( ), silicon layer ( ), and insulating layer ( ) are sequentially formed on the resultant structure to prepare a first substrate ( ). This first substrate ( ) is bonded to a second substrate ( ). The bonded substrate stack is separated into two parts at the separation layer ( ). Next, Ge in the SiGe layer ( ) is diffused into the silicon layer ( ) by hydrogen annealing. With this process, a strained SOI substrate having the SiGe layer on the insulating layer ( ) and a strained silicon layer on the SiGe layer is obtained.