The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Oct. 14, 2000
Yutaka Maruo, Chino, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
Embodiments include semiconductor devices and a methods for manufacturing the same that suppress deficiencies in the transistor characteristics. A method for manufacturing a semiconductor device includes the steps of (A) forming a polishing stopper layer having a predetermined pattern over a substrate , (B) removing a part of the substrate using the polishing stopper layer as a mask to form a trench , (C) forming a trench oxide film over a surface of the substrate that forms the trench , (D) forming an insulating layer that fills the trench over an entire surface of the substrate, (E) polishing the insulating layer by a chemical-mechanical polishing, (F) removing the polishing stopper layer , and (G) etching a part of the insulating layer to form a trench insulating layer . The method further includes the step (a) of forming an etching stopper layer for the trench oxide film over the trench oxide film at least above the trench , and the etching stopper layer 90 is more resistant to etching than the insulating layer in the step (G).