The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Aug. 22, 2002
Takumi Nakahata, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for selectively forming an epitaxial thin film on a semiconductor substrate by controlling a flow rate of a source gas supplied to a deposition ambient includes determining a relation between the growth rate of the epitaxial thin film and the gas flow rate by changing the flow rate of the gas supplied to the deposition ambient at a prescribed temperature. A mass transfer limited region, a kinetically limited region, and an intermediate region are identified. The method further includes supplying the source gas at the flow rate corresponding to the intermediate region to form the epitaxial thin film on the semiconductor substrate. Thus, a method for selectively forming a flat epitaxial thin film by controlling the growth temperature and the gas flow rate is provided.