The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Dec. 21, 2001
Applicant:
Inventor:
Vlad J. Novotny, Los Gatos, CA (US);
Assignee:
Active Optical Networks, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
Described is a photolithography “deep-well lithography” process for forming Micro-Electro-Mechanical Systems (MEMS) structures. The process differs from conventional lithography in that the surface being patterned is not the uppermost surface, but is instead the bottom of a “well” defined beneath the uppermost surface. The focal plane of the photolithography equipment is offset from the uppermost surface as appropriate to account for the depth of the well in which the pattern is to be formed. The bottom of the well is then patterned to produce a desired structure.