The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Jan. 24, 2002
Hideo Asano, Machida, JP;
Koji Kitamura, Kusatsu, JP;
Hisatada Miyatake, Ohtsu, JP;
Kohki Noda, Fujisawa, JP;
Toshio Sunaga, Ohtsu, JP;
Hiroshi Umezaki, Fujisawa, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC and SC . The sub-cell SC includes magneto resistive elements MTJ and MTJ and a selection transistor Tr , and the sub-cell SC includes magneto resistive elements MTJ and MTJ and a selection transistor Tr . The magneto resistive elements MTJ and MTJ are connected in parallel, and the magneto resistive elements MTJ and MTJ are also connected in parallel. Further, the sub-cells SC and SC are connected in series between the write/read bit line BLW/R and the ground.