The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Jun. 30, 2003
Applicant:
Inventors:
Shion-Hau Liaw, Hsinchu, TW;
Li-Yeh Chen, Miaoli, TW;
Assignee:
Brilliance Semiconductor Inc., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/100 ;
U.S. Cl.
CPC ...
G11C 1/100 ;
Abstract
A new memory cell combination is disclosed. It includes a static random access memory (SRAM) unit and a mask read only memory (MROM) unit. The prior art separates the two memory units in different areas on a chip so that the circuit layout is not optimized. The disclosed cell combines them in the same area, saving more than 20% of the area.
Liaw, Shion-Hau. (2004). Combination of sram and mrom cells (U.S. Patent No. 6826073). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6826073
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile