The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2004

Filed:

Feb. 14, 2002
Applicant:
Inventors:

Takafumi Hashiguchi, Kumamoto, JP;

Takehisa Yamaguchi, Kumamoto, JP;

Naoki Nakagawa, Kumamoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 ; G02F 1/136 ;
U.S. Cl.
CPC ...
G02F 1/1343 ; G02F 1/136 ;
Abstract

The widths of those portions of a semiconductor layer and a drain line overlapping with it which cross an edge line of a gate electrode are made smaller than the channel width of a thin-film transistor. With this measure, the overlap area of the gate electrode and a drain electrode is reduced. As a result, a variation of the above overlap area due to alignment errors in a photolithography apparatus used in patterning the gate lines , the drain electrodes , and source electrodes can be reduced and the frequency of occurrence of display defects can be decreased.


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