The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2004

Filed:

Jun. 02, 2003
Applicant:
Inventors:

Dai-Liang Ting, Hsinchu, TW;

Wei-Chih Chang, Hsinchu Hsien, TW;

Assignee:

AU Optronics Corp., Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1335 ;
U.S. Cl.
CPC ...
G02F 1/1335 ;
Abstract

A multi-directional diffusion-symmetric slant reflector. A substrate having a plurality of domains thereon is provided. A plurality of diffusion-symmetric slant reflectors are formed on the substrate. The diffusion-symmetric slant reflectors has a variety of shapes, including conical, elliptical cone longitudinal prismatic or other polyhedron shapes. A plurality of bumps, such as cone, elliptical cone or longitudinal prism structures, are formed on the slant surface of the diffusion-symmetric slant reflectors. The longitudinal prismatic and elliptical cone diffusion-symmetric slant reflectors within a domain are aligned to a direction. An reflection layer such as an aluminum layer, a silver layer or a layer made of materials with a characteristic of reflection, is formed over the surface of the diffusion-symmetric slant reflector. A method of forming a diffusion-symmetric slant reflector is also provided. A substrate is provided and then a photoresist layer is formed over the substrate. After the substrate and the photoresist layer assembly are baked, a photolithographic process is conducted using a gray-level mask, a multi-step exposure process or a half-tone mask. The exposed photoresist layer is developed, followed by an intermediate baking and a hard baking. In the final step, aluminum is deposited over the photoresist layer.


Find Patent Forward Citations

Loading…