The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Aug. 12, 2002
Hiroshi Iwata, Nara, JP;
Akihide Shibata, Nara, JP;
Seizo Kakimoto, Nara, JP;
Kouichiro Adachi, Tenri, JP;
Masayuki Nakano, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device comprises a semiconductor substrate including an isolation region and an active region a gate electrode provided on the active region via a gate insulating film part of a side of the gate electrode being covered with a gate electrode side wall insulating film and a source region and a drain region provided on opposite sides of the gate electrode via the gate electrode side wall insulating film At least one of the source region and the drain region has a second surface for contacting a contact conductor. The second surface is tilted with respect to a first surface A-A′. An angle between the second surface and a surface of the isolation region is 80 degrees or less.