The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Sep. 11, 2002
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A heterojunction bipolar transistor comprising a collector layer of a first conductivity type, a base layer of a second conductivity type, and an emitter layer of the first conductivity type, which are formed on a semiconductor substrate in this order, and further a collector electrode directly or indirectly connected to the collector layer, a base electrode directly or indirectly connected to the base layer, and an emitter electrode directly or indirectly connected to the emitter layer, wherein a semiconductor protecting layer is formed on the base layer and extended outside an edge of the base layer, the base electrode is formed on the semiconductor protecting layer, and at least a region under the semiconductor protecting layer is filled with an organic insulator.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile