Manufacturing method of semiconductor device and substrate processing apparatus

Abstract

It is an object of the present invention to effectively and efficiently inhibit the influence of an eliminated gas from a built-up film deposited in a reaction chamber and reduce an incubation time to improve flatness of a thin film. A manufacturing method of a semiconductor device includes a preprocess step and a film-forming step. In the preprocess step, an RPH (Remote Plasma Hydrogenation) process of supplying a hydrogen radical onto a substrate ( ), thereafter, an RPN (Remote Plasma Nitridation) process of supplying a nitrogen radical onto the substrate ( ), and thereafter, an RPO (Remote Plasma Oxidation) process of supplying an oxygen radical onto the substrate ( ) are performed during a substrate temperature increase for raising a substrate temperature up to a film-forming temperature. In the film-forming step, after the substrate temperature is raised up to the film-forming temperature, a film-forming process is performed by a thermal CVD method by supplying a source gas onto the substrate ( ), and thereafter, the RPO process is performed ( ). In this film-forming step, the film-forming source supply onto the substrate and the RPO process are preferably repeated a plurality of times.