The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Sep. 13, 2002
Applicant:
Inventor:
Arnd R. Scholz, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
In a process for manufacturing deep trench ( ) memory cells, a method of enhancing the process window by better protecting the nitride spacer ( ) prior to the process of stripping the pad nitride layer ( ). The method also provides for the deposition of a nitride liner ( ) and offers an additional advantage of not requiring the top shoulder ( ) of the nitride spacer ( ) to be over etched during its formation.