The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6822920 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 23, 2004

Filed:

Aug. 12, 2003
Applicant:
Inventors:

In Sun Yoo, Icheon-si, KR;

Sun Hyoung Lee, Seoul, KR;

Dong Woo Shin, Icheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract

Disclosed herein is a synchronous SRAM-compatible memory using DRAM cells. In the synchronous SRAM-compatible memory of the present invention, a refresh operation is controlled in response to a refresh clock signal having a period “n” times a period of a reference clock signal. The refresh operation is performed while a chip enable signal/CS is inactivated. A writing/reading access operation is performed in response to a writing/reading command generated while the chip enable signal/CS is activated. Therefore, in the writing/reading access operation of the synchronous SRAM-compatible memory of the present invention, no delay of time occurs that would otherwise occur due to the refresh operation of the DRAM cells.


Find Patent Forward Citations

Yoo, In. (2004). Sram-compatible memory device employing dram cells (U.S. Patent No. 6822920). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6822920

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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