The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Feb. 18, 2003
Peter Pöchmüller, Colchester, VT (US);
Infineon Technologies AG, Munich, DE;
Abstract
An integrated memory includes memory cells arranged in a memory cell array and a read/write amplifier for evaluating and amplifying data signals of the memory cells that are being read out or written to. An error correction circuit is connected to the read/write amplifier. Data signals of selected memory cells that are to be read out or written are received by the error correction circuit, checked for errors, and in the case of a detected erroneous data signal, the erroneous data signal is corrected by being inverted and is output. The memory, even in the case of a defective memory cell, in particular a memory cell with a variable memory cell time or retention time (also called VRT-Variable Retention Time), can nevertheless largely be operated reliably.