The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
May. 30, 2003
Won-suk Yang, Kyunggi-do, KR;
Jae-young Lee, Kyunggi-do, KR;
Chang-hyun Cho, Kyunggi-do, KR;
Ki-nam Kim, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for arranging a power supply line in a semiconductor device including a plurality of memory cell array blocks and a semiconductor device are provided in order to supply stable operating voltages, such as a power supply voltage and a ground voltage, to a sense amplifier allocated to each of the plurality of memory cell array blocks. The method includes the steps of arranging a plurality of first interconnections that extend in one direction and are spaced apart from one another on a semiconductor substrate on which the plurality of memory cell array blocks are formed, forming a first insulating layer on the plurality of first interconnections, arranging a plurality of power reinforcing lines that extends in one direction and are spaced apart from one another on the plurality of first interconnections on the first insulating layer, forming a second insulating layer on the plurality of power reinforcing lines, and arranging a plurality of second interconnections that intersect the plurality of first interconnections and the plurality of power reinforcing lines on the second insulating layer. The plurality of second interconnections include a first group and a second group, and the second interconnections in the second group are electrically connected to the plurality of power reinforcing lines on the plurality of memory cell array blocks via contact plugs formed in the second insulating layer.