The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Feb. 20, 2003
Hiraku Kozuka, Kanagawa, JP;
Osamu Iketa, Kanagawa, JP;
Mineo Shimotsusa, Tokyo, JP;
Takashi Morii, Kanagawa, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device having a high source breakdown voltage and high performance and high reliability and a liquid jet apparatus are provided. In a semiconductor device having a switching element for flowing current through a load and a circuit for driving the switching element, respectively formed on the same substrate, the circuit has a source follower transistor for generating a drive voltage to be applied to a control electrode of the switching element, and the source region of the source follower transistor has a first doped region connected to the source electrode and a second doped region having an impurity concentration lower than that of the first doped region, the second doped region forming a pn junction with a semiconductor region forming a channel.