The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
May. 24, 2002
Applicant:
Inventors:
Takahisa Kurahashi, Kashiba, JP;
Hiroshi Nakatsu, Tenri, JP;
Tetsurou Murakami, Tenri, JP;
Shouichi Ohyama, Nara-ken, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/715 ;
U.S. Cl.
CPC ...
H01L 2/715 ;
Abstract
A semiconductor light-emitting device includes an active layer having a single quantum well structure. The single quantum well structure enables a high-speed response such that the rise and fall time is 2.1 nsec. Further, the single quantum well active layer is doped with Zn at a concentration of 8×10 cm . Thereby, the half-value width of the light-emitting spectrum is 25 nm or more, which is wider than in the case of no doping. Thus, temperature dependence of an optical output is reduced.