The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2004

Filed:

Nov. 19, 2002
Applicant:
Inventors:

Hormuzdiar E. Nariman, Austin, TX (US);

Derick J. Wristers, Bee Caves, TX (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/358 ;
U.S. Cl.
CPC ...
H01L 2/358 ;
Abstract

A method of manufacturing a semiconductor device includes depositing a layer over a substrate and etching the layer to form a grating structure, a cross bridge test structure and a line width measurement structure. The grating structure includes a plurality of parallel lines and one of the multiple parallel lines is connected to the line width measurement structure and the cross bridge test structure. A scatterometry test is performed on the grating structure to obtain a line width and this width is compared to a line width calculated using the line width measurement structure. A semiconductor device is also disclosed.


Find Patent Forward Citations

Loading…