The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Sep. 02, 2003
Carl P. Babcock, Campbell, CA (US);
Jayendra D. Bhakta, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Shallow trench isolation among transistors and other devices on a semiconductor substrate is provided by initially forming a plurality of light absorbing layers having a combined extinction coefficient >0.5. As reflected light passes through the light absorbing layers, a substantially amount of light is absorbed therein thereby blocking such reflected light from negatively interfering with patterning of the photoresist during photo-lithography. Following patterning of the photoresist, isolation trenches are formed in the semiconductor substrate by etching through the light absorbing layers and into the semiconductor substrate in accordance with the pattern formed on the photoresist.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile