The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
May. 07, 2002
Photomask, method of generating resist pattern, and method of fabricating master information carrier
Applicant:
Inventors:
Terumi Yanagi, Osaka, JP;
Nobuyuki Komura, Kyoto, JP;
Tatsuaki Ishida, Shiga, JP;
Keizo Miyata, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/1425 ;
Abstract
A recess for deaeration is formed in the surface of a resist film by using the photolithography technique, a photomask is allowed to come into contact with projections for close contact on both sides or around the recess for deaeration, and evacuation is performed via the recess for deaeration, thereby enhancing close contact between the photomask and the projections for close contact. With the configuration, a resist pattern having an accurate recess while preventing diffraction of light is formed.