The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Dec. 04, 2002
Applicant:
Inventor:
Yoshiyuki Ando, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ; H01L 2/1336 ; H01L 2/13205 ; H01L 2/100 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/18238 ; H01L 2/1336 ; H01L 2/13205 ; H01L 2/100 ; H01L 2/976 ;
Abstract
Fin-type field effect transistors are fabricated on a semiconductor substrate. Rectangular fins are formed on the substrate in a rectangular pattern of rows and columns and gate electrodes are deposited on at least two sides of the fins. The gate electrodes are implanted with ions at an angle &thgr; to a line perpendicular to the substrate, such that D≈H tan &thgr;, where D is the distance between fins in adjacent rows or columns and H is the height of the fins.