The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Jul. 03, 2003
Applicant:
Inventor:
Yasuyuki Ito, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/122 ;
U.S. Cl.
CPC ...
G11C 1/122 ;
Abstract
A ferroelectric-type nonvolatile semiconductor memory comprises a bit line BL , a transistor for selection TR , (C) a memory unit MU composed of memory cells that are M in number (M≧2), and (D) plate lines PL that are M in number; in which each memory cell comprises a first electrode a ferroelectric layer and a second electrode in the memory unit MU , the first electrodes of the memory cells are in common, the ferroelectric layer is composed of lead titanate zirconate [Pb(Zr ,Ti )O ], and said lead titanate zirconate has a composition that satisfies 0.6<Y/(X+Y)≦0.9.