The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Jul. 01, 2003
Yun-Sheng Chen, Kaohsiung, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A fabricating method of low temperature poly-silicon film is described. An amorphous silicon layer is formed on a substrate first; then, an anneal treatment is performed on the amorphous silicon layer for forming a poly-silicon layer (poly-silicon film) from the amorphous silicon layer. Several mounds are formed on the surface of the poly-silicon layer. A surface treatment step is performed; then, another laser anneal step is conducted on the poly-silicon layer. Since the size of these mounds on the surface of the poly-silicon layer can be reduced, the issue that the mounds are too big and have different sizes in the prior art can be resolved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile